Infineon marks innovation milestone with 300mm power silicon carbide wafer

Infineon has achieved an industry milestone by successfully processing the world's first 300-millimeter silicon carbide (SiC) wafers into functional power devices, representing a significant technological breakthrough in wide-bandgap semiconductor technology. This advancement will enable increased production capacity and secure supply of SiC components for automotive, renewable energy, industrial, and AI data center applications. The company will publicly debut the processed 300mm SiC wafer at the electronica trade show in Munich on November 10, 2026.